Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold

Abstract In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO 2 substrates and its effect laser-induced damage threshold (LIDT). The process was studied using in-situ X-ray diffractometry. We determined an activation energy for 2.6 ± 0.5 eV. It found that growth crystallites follows a two-dimensional mode. This, in combination with high energy, leads to apparent layer thickness-dependent temperature. LIDT measurements @355 nm thermally treated 3 quarter-wave thick layers show decrement 0% 1 h @773 K treatment. Thermal treatment 5 significant increment values.